Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle

摘要:

文章预览

UMOSFET is theoretically suitable to decrease the on-resistance of the MOSFET. In this study, in order to determine the cell structure of the SiC UMOSFET with extremely low on-resistance, influences of the orientation of the trench and the off-angle of the wafer on the MOS properties are investigated. The channel resistance, gate I-V curves and instability of threshold voltage are superior on the {11-20} planes as compared with other planes. On the vicinal off wafer, influence of the off-angle disappears and the properties on the equivalent planes are almost the same. The obtained results indicate that the extremely low on-resistance with the high stability and high reliability is possible in the SiC UMOSFET by the hexagonal cell composed of the six {11-20} planes on the vicinal off wafer, and actually an extremely low channel resistance was demonstrated on the hexagonal UMOSFET with the six {11-20} planes on the vicinal off wafer.

信息:

期刊:

编辑:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

页数:

999-1004

DOI:

10.4028/www.scientific.net/MSF.645-648.999

引用:

S. Harada et al., "Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle ", Materials Science Forum, Vols. 645-648, pp. 999-1004, 2010

上线时间:

April 2010

输出:

价格:

$35.00

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