Interface Properties of Au/CdZnTe Formed by Different Method

摘要:

文章预览

In this paper, the effects of different metal contact treatments were systemically investigated. The interfacial properties between Au and CdZnTe (CZT) made by different methods including the electroless deposition, thermal evaporation and sputtering process were investigated by the Auger depth profiles, the adhesion force measurement, and the accelerated aging tests. The current-voltage (I-V) characteristics and the detector response to gamma-rays from 241Am for different Au contact treatments were also identified.

信息:

期刊:

编辑:

Yuan Ming Huang

页数:

1298-1301

引用:

K. F. Qin et al., "Interface Properties of Au/CdZnTe Formed by Different Method", Materials Science Forum, Vols. 663-665, pp. 1298-1301, 2011

上线时间:

November 2010

输出:

价格:

$38.00

[1] R. B. James, T. E. Schlesinger, J. C. Lund et al.: Semiconductors for Room Temperature Nuclear Detector Applications, Vol. 43 (1995), p.334.

[2] Y. Cui, M. Groza, D. Hillman, A. Burger and R. B. James: J. Appl. Phys, Vol. 92 (2002), p.2556.

[3] A. Ruzin and Y. Nemirovsky: Appl. Phys. Lett. Vol. 71 (1997), p.2214.

[4] E. J. Morton, M. A. Hossain, P. De Antonis and A. M. D. Ede: Nuclear Instruments and Methods in Physics Research Section A, Vol. 43 (2001), p.558.

[5] L. J. Wang, W. B. Sang, W. M. Shi et al.: Nuclear Instruments and Methods in Physics Research A, Vol. 448 (2000), p.581.

[6] X. Liang, J. Min, C. Wang, W. Sang et al.: Rare Metal Materials and Engineering Vol. 6 (2009), p. (2085).

[7] W. W. Li, W. B. Sang, J. H. Min et al.: Semiconductor Science and Technology Vol. 37 (2002), p.17.

[8] W. B. Sang, Y. B. Qian, W. M. Shi, et al.: Journal of Crystal Growth Vol. 61 (2000), p.214.