Intrinsic Carrier Concentration in Strained Si1-XGex/(101)Si

摘要:

文章预览

The intrinsic carrier concentration is the important parameter for researching strained Si1-xGex materials properties and evaluating Si-based strained devices parameters. In this paper, at the beginning of analyzing the band structure of strained Si1-xGex/(101)Si, the dependence of its effective densities of states for the conduction and valence bands (Nc, Nv) and its intrinsic carrier concentration (ni) on Ge fraction (x) and temperature were obtained. The results show that ni increases significantly due to the effect of strain in strained Si1-xGex/(101)Si. Furthermore, Nc and Nv decrease with increasing Ge fraction (x). In addition, it is also found that as the temperature becomes higher, the increase in Nc and Nv occurs. The results can provide valuable references to the understanding on the Si-based strained device physics and its design.

信息:

期刊:

编辑:

Yuan Ming Huang

页数:

470-472

DOI:

10.4028/www.scientific.net/MSF.663-665.470

引用:

J. J. Song et al., "Intrinsic Carrier Concentration in Strained Si1-XGex/(101)Si", Materials Science Forum, Vols. 663-665, pp. 470-472, 2011

上线时间:

November 2010

输出:

价格:

$35.00

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