Electron Mobility Model for Strained-Si/(001) Si1-XGex

摘要:

文章预览

There has been much interest in the Si-based strained technology lately. The improvement of strained-Si device performance is due to the enhancement of the mobility, so the further study on mobility is essential in both theory and practice aspects. In this paper, an analytical model of the electron mobility of strained-Si material, such as biaxial tensile strained-Si material grown on relaxed Si1-xGex (0≤x≤0.6) substrates, as a function of strain and different orientations is obtained. The results show that the electron mobilities for [100] and [010] orientations increase rapidly with increasing Ge fraction x, and there is no electron mobility enhancement for [001] orientation in comparison to relaxed Si material.

信息:

期刊:

编辑:

Yuan Ming Huang

页数:

477-480

引用:

J. H. An et al., "Electron Mobility Model for Strained-Si/(001) Si1-XGex", Materials Science Forum, Vols. 663-665, pp. 477-480, 2011

上线时间:

November 2010

输出:

价格:

$38.00

[1] G. Sun, Y. Sun: J. Appl. Phys. Vol. 102 (2007), p.084501.

[2] E.X. Wang and P. Matagne: IEEE Trans. Electron Devices Vol. 53 (2006), p.1840.

[3] A.T. Pham and C. Jungemann: Solid-State Electronics Vol. 52 (2008), p.1437.

[4] J.J. Song and H.M. Zhang: Acta Phys. Sin. Vol. 59(2010), p. (2064).

[5] J.Y. Tang and K. Hess: J. Appl. Phys. Vol. 54 (1983), p.5145.

[6] J.J. Song and H.M. Zhang: Chinese Physics Vol. 16 (2007), p.3827.

[7] J.J. Song and H.M. Zhang: Research & Progress of SSE. Vol. 29 (2009), p.14.

[8] S.S. Li: Semiconductor Physical Electronics, New York: Springer Press, (2006), p.185.

[9] T. Vogelsang, K.R. Hofmann: Appl. Phys. Lett. Vol. 63 (1993), p.186.

[10] J. Welser and J.L. Hoyt: IEEE IEDM. Vol. 15 (1994), p.373.

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