The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components

摘要:

文章预览

信息:

期刊:

编辑:

G. Minchev and L. Pramatarova

页数:

101-106

DOI:

10.4028/www.scientific.net/MSF.69.101

引用:

T.Q. Tuy et al., "The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components", Materials Science Forum, Vol. 69, pp. 101-106, 1991

上线时间:

January 1991

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价格:

$35.00

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