Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals
Photoluminescence (PL) spectroscopy has been used to characterize neutron-irradiated cubic silicon carbide crystals. The effects of thermal annealing (600-1100OC) on the PL bands have been studied. Several PL bands consisting of a sharp line and its phonon replicas have been observed in the 9-80 K temperature range. Certain of them like the D1 spectrum doublet with 1.975 eV and 1.977 eV zero-phonon lines (ZPL) at 9 K and the L2 spectrum with ZPL at 1.121 eV were reported previously for ion-implanted and electron irradiated 3C-SiC crystals, respectively. Besides, some new bands with ZPL at 2.027, 1.594, 0.989 and 0.844 eV and a broad band at 1.360 eV have been found. A correlation of PL and EPR spectra intensities of these neutron-irradiated and annealed cubic SiC crystals is briefly discussed.
Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein
V. Bratus' et al., "Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals", Materials Science Forum, Vols. 740-742, pp. 417-420, 2013