Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals

摘要:

文章预览

Photoluminescence (PL) spectroscopy has been used to characterize neutron-irradiated cubic silicon carbide crystals. The effects of thermal annealing (600-1100OC) on the PL bands have been studied. Several PL bands consisting of a sharp line and its phonon replicas have been observed in the 9-80 K temperature range. Certain of them like the D1 spectrum doublet with 1.975 eV and 1.977 eV zero-phonon lines (ZPL) at 9 K and the L2 spectrum with ZPL at 1.121 eV were reported previously for ion-implanted and electron irradiated 3C-SiC crystals, respectively. Besides, some new bands with ZPL at 2.027, 1.594, 0.989 and 0.844 eV and a broad band at 1.360 eV have been found. A correlation of PL and EPR spectra intensities of these neutron-irradiated and annealed cubic SiC crystals is briefly discussed.

信息:

期刊:

编辑:

Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein

页数:

417-420

引用:

V. Bratus' et al., "Photoluminescence Spectroscopy of Neutron-Irradiated Cubic SiC Crystals", Materials Science Forum, Vols. 740-742, pp. 417-420, 2013

上线时间:

January 2013

输出:

价格:

$38.00

[1] W. J. Choyke, D. R. Hamilton, Lyle Patrick, Optical properties of cubic SiC: luminescence of nitrogen-exciton complexes, and interband absorption, Phys. Rev. 133 (1964) A1163-A1166.

DOI: https://doi.org/10.1103/physrev.133.a1163

[2] W. J. Choyke, L. Patrick, Luminescence of donor-acceptor pairs in cubic SiC, Phys. Rev. B 2 (1970) 4959–4965.

DOI: https://doi.org/10.1103/physrevb.2.4959

[3] W. Choyke, A review of radiation damage in SiC, Inst. Phys. Conf. Ser. 11 (1977) 58-69.

[4] W. J. Choyke, Z. C. Feng, J. A. Powell, Low-temperature photoluminescence studies of chemical-vapor-deposition-grown 3C-SiC on Si, J. Appl. Phys. 64 (1988) 3163-3175.

DOI: https://doi.org/10.1063/1.341532

[5] N. T. Son, E. Sörman, W. M. Chen, C. Hallin, O. Kordina, B. Monemar, E. Janzén, J. L. Lindström, Optically detected magnetic resonance studies of defects in electron-irradiated 3C SiC layers, Phys. Rev. B 55 (1997) 2863-2866.

DOI: https://doi.org/10.1103/physrevb.55.2863

[6] H. Itoh, M. Yoshikawa, I. Nashiyama, H. Okumura, S. Misawa, S. Yoshida, Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si, J. Appl. Phys. 77 (1995) 837-842.

DOI: https://doi.org/10.1063/1.359008

[7] T. A. G. Eberlein, R. Jones, S. Öberg, P. R. Briddon, Density functional theory calculation of the DI optical center in SiC, Phys. Rev. B 74 (2006) 144106.

DOI: https://doi.org/10.1103/physrevb.74.144106

[8] S. Sorieul, J. -M. Constantini, L. Gosmain, L. Thomé, J. -J. Grob, Raman spectroscopy study of heavy-ion-irradiated α-SiC, J. Phys.: Condens. Matter 18 (2006) 5235-5251.

DOI: https://doi.org/10.1088/0953-8984/18/22/022

[9] D.N. Talwar, Z.C. Feng, Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(100) by modeling and simulation, Comp. Mater. Sci. 30 (2004) 419-424.

DOI: https://doi.org/10.1016/j.commatsci.2004.02.035

[10] V. Bratus', R. Melnyk, S. Okulov, B. Shanina, V. Golub, I. Makeeva, An EPR study of defects in neutron-irradiated cubic SiC crystals, This issue.

DOI: https://doi.org/10.4028/www.scientific.net/msf.740-742.361