Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

摘要:

文章预览

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part of the SiC bandgap are able to describe the electrical data equally well. In one of them, acceptor-like traps and fixed charge are considered while in a newly developed one, donor-like traps are taken into account also.

信息:

期刊:

编辑:

Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein

页数:

533-536

引用:

V. Uhnevionak et al., "Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets", Materials Science Forum, Vols. 740-742, pp. 533-536, 2013

上线时间:

January 2013

输出:

价格:

$38.00

[1] S. Potbhare, N. Goldsman, G. Pennington, J. Appl. Phys. 100 (2006), 044515.

[2] J. M. Knaup, P. Deak, Th. Frauenheim, Phys. Rev. B 72 (2005), 115323.

[3] F. Devynck, A. Alkauskas, P. Broqvist, A. Pasquarello, Phys. Rev. B 84 (2011), 235320.

[4] S. Dhar, S. Haney, L. Cheng, S. -R. Ryu, A.K. Agarwal, J. Appl. Phys. 108 (2010), 054509.

[5] F. Ciobanu, T. Frank, G. Pensl, Mater. Sci. Forum Vols. 527-529 (2006), 991-994.

[6] G. Pensl, F. Ciobanu, T. Frank, D. Kirmse, Microelectronic Eng. 83 (2006), 146-149.

[7] S. Beljakowa, M. Krieger, T. Frank, Mater. Sci. Forum Vols. 600-603 (2009), 727-730.

[8] V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, Appl. Phys. Lett. 82 (2003), 568.

[9] P. Deak, J. M. Knaup, T. Hornos, Ch. Thill, A. Gali, J. Phys. D 40 (2007), 6242-6253.

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