Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC

摘要:

文章预览

4H-SiC homoepitaxial layers with different thicknesses from 12.5 µm up to 50 µm were investigated by microwave-detected photoconductivity decay (µ-PCD), deep level transient spectroscopy (DLTS) and defect selective etching (DSE) to shed light on the influence of the epilayer thickness and structural defects on the effective minority carrier lifetime. It is shown that the effective lifetime, resulting directly from the µ-PCD measurement, is significantly influenced by the surface recombination lifetime. Therefore, an adequate correction of the measured data is necessary to determine the bulk lifetime. The bulk lifetime of these epilayers is in the order of several microseconds. Furthermore, areas with high dislocation density are correlated to areas with locally reduced effective lifetime.

信息:

期刊:

编辑:

Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein

页数:

633-636

引用:

B. Kallinger et al., "Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC", Materials Science Forum, Vols. 740-742, pp. 633-636, 2013

上线时间:

January 2013

输出:

价格:

$41.00

[1] T. Kimoto, T. Hiyoshi, T. Hayashi, J. Suda; Journal of Applied Physics 108 (2010) 083721.

[2] G. Feng, J. Suda, T. Kimoto; Journal of Applied Physics 110 (2011) 33525.

[3] A. B. Sproul; Journal of Applied Physics 76 (1994) 2851.

[4] G. Chung et al.; Materials Science Forum 556-557 (2007) 323-326.

[5] C. Hecht, B. Thomas, W. Bartsch; Materials Science Forum 527-529 (2006) 239-242.

[6] S. G. Sridhara, R. P. Devaty, W. J. Choyke; Journal of Applied Physics 84 (1998) 2963-2964.

[7] B. Kallinger et al.; Journal of Crystal Growth 314 (2011) 21-29.

[8] B. Zippelius et al.; Materials Science Forum 615-617 (2009) 393-396.

[9] K. Neimontas et al.: Materials Science Forum 527-529 (2006) 469-472.

[10] T. Kimoto, N. Miyamoto, H. Matsunami; IEEE Trans. Electron Dev. 46, 3 (1999) 471-477.