Defects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si02 Interface

摘要:

文章预览

信息:

期刊:

编辑:

Gordon Davies, G.G. DeLeo and M. Stavola

页数:

1427-1432

DOI:

10.4028/www.scientific.net/MSF.83-87.1427

引用:

D. Vuillaume et al., "Defects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si02 Interface", Materials Science Forum, Vols. 83-87, pp. 1427-1432, 1992

上线时间:

January 1992

输出:

价格:

$35.00

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