A New Type of Single Carrier Conduction Rectifier on SiC

摘要:

文章预览

A new rectifier, called SPND or SNPD (Schottky-PN or -NP junction diode) and inherently showing low on-resistance and unipolar operation, was experimentally demonstrated for the first time on 4H-SiC. It is structured with an n or a p region of very low doping that is sandwiched and completely depleted between a Schottky junction and a one-sided PN junction. Either electrons or holes, but not both, contribute to the current conduction process. Clear and sharp rectifying properties are observed over the entire range of applied voltage.

信息:

期刊:

编辑:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

页数:

769-772

引用:

S. Tanimoto et al., "A New Type of Single Carrier Conduction Rectifier on SiC", Materials Science Forum, Vol. 858, pp. 769-772, 2016

上线时间:

May 2016

输出:

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