3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation

摘要:

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A 3.3 kV trench MOSFET with double-trench structure was demonstrated. The deep buried p-base regions were fabricated using tilt angle ion implantation into the sidewalls of the trench contacts. The distance between the trench gate and trench contact was determined through simulation, in order to optimize the trade-off between on-resistance (RonA) and the electrical field in the oxide (Eox). A tapered trench was located in the connective area between the edge termination and the active area, in order to maintain breakdown voltage. We achieved a RonA of 10.3 mWcm2 and a breakdown voltage of 3843 V and the maximum Eox at breakdown voltage was estimated to be 3.2 MV/cm.

信息:

期刊:

编辑:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

页数:

974-977

引用:

Y. Kobayashi et al., "3.3 kV-Class 4H-SiC UMOSFET by Double-Trench with Tilt Angle Ion Implantation", Materials Science Forum, Vol. 858, pp. 974-977, 2016

上线时间:

May 2016

输出:

价格:

$38.00

* - 通讯作者

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