Silicon Carbide and Related Materials 2016


doi: 10.4028/

文章题目 页数

作者: Hiromasa Suo, Kazuma Eto, Tomohisa Kato, Kazutoshi Kojima, Hiroshi Osawa, Hajime Okumura

摘要: The growth of n-type 4H-SiC crystal was performed by physical vapor transport (PVT) growth method by using nitrogen and aluminum (N-Al) co-doping....

作者: Evgeniy N. Mokhov, Sergey S. Nagalyuk, Victor A. Soltamov

摘要: The distribution of extended defects in silicon carbide (SiC) crystals grown on profiled seeds by the sublimation (physical vapor transport)...

作者: Jung Woo Choi, Jong Hwi Park, Jung Doo Seo, Jung Gyu Kim, Myung Ok Kyun, Kap Ryeol Ku, Hwang Ju Kim, Dong Hoon Lee, Yeon Suk Jang, Won Jae Lee

摘要: The method to attach seed to crucible lid as well as seed quality is very important for obtaining high quality crystals. Therefore, modified...

作者: Philipp Schuh, Grazia Litrico, Francesco La Via, Marco Mauceri, Peter J. Wellmann

摘要: We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3C-SiC/Si) from chemical vapor deposition. We have reached a...

作者: Xiu Fang Chen, Fu Sheng Zhang, Xiang Long Yang, Yan Peng, Xue Jian Xie, Tian Li, Xiao Bo Hu, Xian Gang Xu, Guang Lei Li, Rui Qi Wang

摘要: Three-inch 6H-SiC bulk crystals were grown by the PVT method on the seeds processed by different treatments. The influences of seed surface...

作者: Kenta Murayama, Tsukasa Hori, S. Harada, S. Xiao, M. Tagawa, Toru Ujihara

摘要: In order to achieve a high-quality SiC crystal in solution growth, one of the most difficult issues is to grow a thick layer on Si face avoiding...

作者: Tsukasa Hori, Kenta Murayama, S. Harada, S. Xiao, M. Tagawa, Toru Ujihara

摘要: The relationship between surface morphology and spatial distribution of basal plane dislocations in 4H-SiC crystal grown by top-seeded solution...

作者: S. Harada, Goki Hatasa, Kenta Murayama, Tomohisa Kato, M. Tagawa, Toru Ujihara

摘要: In order to design a solvent for high-purity SiC solution growth, the impurity incorporation and the carbon solubility of various solvent...

作者: Ling Guo, Koji Kamei, Kenji Momose, Hiroshi Osawa

摘要: In this study, we investigated the epitaxial surface defects resulting from the carbon-inclusion defects in 4H-SiC substrate. Most...