150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD
In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperature and adding HCl, the epitaxial growth rate at the bottom of trench is greatly enhanced compare to growth on the mesa top. And we obtain high growth rate 7.6μm/h at trench bottom on 150mm-diameter-wafer uniformly with high speed rotation (1000rpm).
Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis
K. Hara et al., "150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD", Materials Science Forum, Vol. 897, pp. 43-46, 2017