150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD



In this work, we have developed a selective embedded epitaxial growth process on 150-mm-diameter wafer by vertical type hot wall CVD reactor with the aim to realize the all-epitaxial 4H-SiC MOSFETs [1, 2, 3, 4, 5]. We found that at elevated temperature and adding HCl, the epitaxial growth rate at the bottom of trench is greatly enhanced compare to growth on the mesa top. And we obtain high growth rate 7.6μm/h at trench bottom on 150mm-diameter-wafer uniformly with high speed rotation (1000rpm).




Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis




K. Hara et al., "150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD", Materials Science Forum, Vol. 897, pp. 43-46, 2017


May 2017




* - 通讯作者

[1] S. Onda, R. Kumar, and K. Hara: Physica Satus Solidi (a) Vol. 162 (1997), p.369.

[2] Y. Takeuchi, M. Kataoka, T. Kimoto, H. Matsunami and R.K. Malhan: Materials Science Forum Vols. 527-529(2006) pp.251-254.

DOI: https://doi.org/10.4028/www.scientific.net/msf.527-529.251

[3] R. K. Malhan, Y. Takeuchi, M. Kataoka, A. P. Mihaila, S. J. Rashid, F. Udrea, and G. Amarayunga: 3rd International Conference on Material and Advanced Technologies, (2005).

[4] K. Kojima, A. Nagata, S. Ito, Y. Sakuma, R. Kosugi, Y. Tanaka: Materials Science Forum Vols. 740-742(2013) pp.793-796.

DOI: https://doi.org/10.4028/www.scientific.net/msf.740-742.793

[5] H. Fujibayashi, M. Ito, I. Kamata, M. Naito, K. Hara, S. Yamauchi, K. Suzuki, M. Yajima, S. Mitani: Applied Physics Express, Vol 7. Number 1 (2014) 015502.

DOI: https://doi.org/10.7567/apex.7.015502

[6] O. Drozdova, I. Miura and N. Ohtani: International Conference on Silicon Carbide and Related Materials (2013), p.142, Tu-P-28.

[7] K. Hara, M. Naito, H. Fujibayashi, A. Akiba, Y. Takeuchi, O. Milikofu, T. Kozu, Materials Science Forum, Vols. 821-823, pp.339-342, (2015).

DOI: https://doi.org/10.4028/www.scientific.net/msf.821-823.339