1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance
A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiCTM MOSFET is shown which is designed for an on-resistance of 45 mΩ. In order to be compatible to various standard gate drivers the gate voltage range is designed for-5 V in off-state and +15 V in on-state. Long term gate oxide life time tests reveal that the extrinsic failure evolution follows the linear E-model which allows a confident prediction of the failure rate within the life time of the device of 0.2 ppm in 20 years under specified use condition.
Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis
D. Peters et al., "1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance", Materials Science Forum, Vol. 897, pp. 489-492, 2017