1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance

摘要:

文章预览

A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiCTM MOSFET is shown which is designed for an on-resistance of 45 mΩ. In order to be compatible to various standard gate drivers the gate voltage range is designed for-5 V in off-state and +15 V in on-state. Long term gate oxide life time tests reveal that the extrinsic failure evolution follows the linear E-model which allows a confident prediction of the failure rate within the life time of the device of 0.2 ppm in 20 years under specified use condition.

信息:

期刊:

编辑:

Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis

页数:

489-492

引用:

D. Peters et al., "1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance", Materials Science Forum, Vol. 897, pp. 489-492, 2017

上线时间:

May 2017

输出:

价格:

$38.00

* - 通讯作者

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