Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer

摘要:

文章预览

Nickel (Ni) is the most widely used metal for the formation of ohmic contact on n-type SiC. However, the irregular contact can potentially cause degradation in the device performance. To form the uniform ohmic interface, titanium (Ti) was applied as a barrier layer. Ni/Ti/SiC and Ti/Ni/SiC contact metal structures were prepared, and ohmic contacts were formed using a rapid thermal annealing process. The interfacial properties of both contact metal structures were enhanced by applying the Ti layer. The specific contact resistance of ohmic contacts showed a slightly lower or similar value (~ low 105 Ωcm2) compared with the specific contact resistance values formed from only the Ni contact metal.

信息:

期刊:

编辑:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

页数:

397-400

引用:

M. Na et al., "Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer", Materials Science Forum, Vol. 924, pp. 397-400, 2018

上线时间:

June 2018

输出:

价格:

$38.00

* - 通讯作者

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