Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer
Nickel (Ni) is the most widely used metal for the formation of ohmic contact on n-type SiC. However, the irregular contact can potentially cause degradation in the device performance. To form the uniform ohmic interface, titanium (Ti) was applied as a barrier layer. Ni/Ti/SiC and Ti/Ni/SiC contact metal structures were prepared, and ohmic contacts were formed using a rapid thermal annealing process. The interfacial properties of both contact metal structures were enhanced by applying the Ti layer. The specific contact resistance of ohmic contacts showed a slightly lower or similar value (~ low 105 Ωcm2) compared with the specific contact resistance values formed from only the Ni contact metal.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
M. Na et al., "Formation of the Uniform Interface Ni/4H-SiC Ohmic Contact with Titanium as Barrier Layer", Materials Science Forum, Vol. 924, pp. 397-400, 2018