摘要: Polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al
structure were prepared by spin coating method on the plasma-treated ITO(indium tin oxide)/glass
substrates. PVK(N-vinylcabozole) and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene
sulfolnate)] polymers were used as hole injection and transport materials. As blue light emitting
material, PFO-poss(poly(9,9-dioctylfluorence) polymer was used. The dependence of the plasma
treatment of ITO films on the optical and electrical properties of the PLEDs was investigated. The
sheet resistance of ITO films increased slightly with increasing the plasma intensity from 20W to
300W in RF power. In contrast, the surface roughness was improved as the plasma intensity increased.
The maximum current density and luminance were about 20 mA/cm2 and 250 cd/m2 at 9 V for the
PLED sample coated on ITO/glass substrate with plasma treatment of 100W for 30s under 40 mtorr
O2 pressure. The maximum emission spectrum of the PLEDs was 441 nm showing blue color.
摘要: The effect of a binary surfactant on the luminance efficiency of a green phosphor was
investigated with an emphasis on the chemical control of interactions between the suspension
components. The dispersion system of the green phosphor paste was designed by an evaluation of the
acid and base properties of the green phosphor and the surface active organic molecules by a
non-aqueous titration method. Oleyl amine and 4-(1,1,3,3-tetramethylbutyl) phenyl-polyethylene
phosphoric acid (hereafter SAIT7) were added into the green phosphor paste taking into account the
ratio between the acid and base sites of the green phosphor particle’s surface. This resulted in a higher
maximum solid loading and a further decrease in the viscosity of the green phosphor paste compared
to a single addition of SAIT7 and oleyl amine. The green phosphor paste with the binary surfactant
exhibited a much improved photoluminescence intensity and homogeneity of the emission properties
than a single addition of the dispersant.
摘要: Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase
crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline
furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative
heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of
amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by
FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects
摘要: We investigated the characteristics of pentacene thin films of different materials for gate
insulators using atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin
films are fabricated by evaporation on different polymer substrates. We used HMDS (Hexa Methyl
Di Silazane), PVA (Poly Vinyl Alcohol) and PMMA (Poly Methyl Meth Acrylate) for the polymer
substrates, on which pentacene is deposited at various substrate temperatures. The case of pentacene
deposited on the PMMA has the largest grain size and least trap concentration. We also fabricated
pentacene TFTs with the PMMA gate insulator. Pentacene TFTs with PMMA gate insulator, shows
high field-effect mobility (ｕFET= 0.03 cm2/Vs) and large on/off current ratio (>105) and small
threshold voltage (Vth= -6 V).
摘要: The thin films of SiO and SiON were deposited individually by the inclination opposite
target type DC magnetron sputtering equipment onto the glass substrate. And it was deposited
IZO(In2O3 (90wt.%) + ZnO(10wt.%)) on those films. The effects of SiO and SiON were investigated
on properties of IZO thin films. AFM images of IZO thin film included SiON film were shown
smoother surfaces than that included SiO film. Multi layers of IZO were shown good properties
because it have high transmissivity. Resistivity is in inverse proportion to Mobility. If it deposited SiO
and SiON, generate layer of change between two layers(SiO or SiON + Substrate). Layer of change
influenced resistance because Oxygen content was more than single layer of IZO. In case of using
PET substrate, it influenced stronger than Glass substrate for rigid gas permeable and osmosis.
摘要: We report on the synthesis and fabrication of novel polymer/organic materials for
application for what we call optical printed circuit board (O-PCB) for VLSI photonic circuit
(VLSI-PIC). We synthesize copolymers containing cross-linkable pendant groups suitable for
embossing and novel device fabrication. We also synthesize organic-inorganic hybrid materials of
low optical absorption, good adhesion, low dielectric constant, high dielectric strength, high thermal
stability, excellent photo-patterning possibility and variability of refractive index. Steps of synthesis
and fabrication of these materials are described along with their optical, material, and performance
characteristics. O-PCB and VLSI photonic circuit design and fabrication processes are also presented.
摘要: About 2-thick, amorphous SiON thin films were deposited by the PECVD method, and
heated up to 1000oC in air to study the post-annealing effect on the composition and structure of the
SiON film. SiON had a strong SiO2 binding energy with a weak N-binding, so that air-annealing
resulted in nitrogen escape from the film. The inwardly transported oxygen from the atmosphere
was simply supersaturated inside the annealed, amorphous SiON thin film.
摘要: The crystal defects in diamonds are diverse. In other words, there are almost no perfect
diamonds without impurities or dislocations. Most natural diamonds contain a considerable amount
of nitrogen impurity in aggregated forms. CVD diamond films also included many crystal defects.
We investigated the distribution of luminescence center of natural type Ia diamonds and CVD
diamond films by various photoluminescence excitation source. Photoluminescence (PL)
spectroscopy is a useful technique to provide information on defects of diamond with high sensitivity.
摘要: A novel process of wafer bonding between InP and a garnet crystal (Gd3Ga5O12,
CeY2Fe5O12) based on O2 plasma surface-activation and low temperature heat treatment is presented.
The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and
Gd3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface,
which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an
integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was
obtained to be 2.9 dB.