Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)

摘要:

文章预览

信息:

期刊:

编辑:

H.G. Grimmeiss, M. Kittler and H. Richter

页数:

481-488

DOI:

10.4028/www.scientific.net/SSP.32-33.481

引用:

L. Goldstein et al., "Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)", Solid State Phenomena, Vols. 32-33, pp. 481-488, 1993

上线时间:

December 1993

输出:

价格:

$35.00

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