Wet Oxide Etching of Dual Gate Oxide for 0.13μm Technologies and Beyond: Interaction with Photoresist and Equipment

摘要:

文章预览

信息:

期刊:

编辑:

Marc Heyns, Paul Mertens and Marc Meuris

页数:

85-88

引用:

S. Y.M. Chooi et al., "Wet Oxide Etching of Dual Gate Oxide for 0.13μm Technologies and Beyond: Interaction with Photoresist and Equipment", Solid State Phenomena, Vol. 92, pp. 85-88, 2003

上线时间:

May 2003

输出:

价格:

$38.00