通过作者查论文: Junichi Koike

文章题目页数

作者: T. Kobayashi, Junichi Koike, Toshiji Mukai, Mayumi Suzuki, H. Watanabe, Kouichi Maruyama, Kenji Higashi
231
作者: Mayumi Suzuki, Teiichi Kimura, Junichi Koike, Kouichi Maruyama
593
作者: Junichi Koike
摘要: Deformation mechanisms of Mg-Al-Zn (AZ31) alloys were investigated by performing tensile test at room temperature. In fine grain Mg alloys deformed at room temperature, nonbasal slip systems were found to be active as well as basal slip systems because of grain-boundary compatibility effect. Slip-induced grain-boundary sliding occurred as a complementary deformation mechanism to give rise to c-axis component of strain. With increasing grain size, the activation of the nonbasal slip systems was limited near grain boundaries. Instead of grain-boundary sliding, twinning occurred as a complementary deformation mechanism in large grained samples. Orientation analysis of twins indicated that twinning is induced by stress concentration due to the pile up of basal dislocations. The grain-size dependence on deformation mechanism was found to affect yielding behavior both microscopically and macroscopically which can influence various mechanical properties such as fatigue and creep.
665
作者: Mayumi Suzuki, R. Inoue, M. Sugihara, H. Sato, Junichi Koike, Kouichi Maruyama, H. Oikawa
151
作者: Mayumi Suzuki, T. Kimura, Junichi Koike, Kouichi Maruyama
473
作者: R. Ohyama, Junichi Koike, T. Kobayashi, Mayumi Suzuki, Kouichi Maruyama
237
作者: Soo Jung Hwang, Junichi Koike, Young Chang Joo
摘要: The reaction induced phase separation aimed for the distribution of nano-structured particles has been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) in ternary Ti-Si-N film via N+ implantation. The fabrication of Ti-20at%Si film has made on Si substrates by ion beam sputtering (IBS), and then N+ implantation with 50 keV has been conducted on these films. The selected area electron diffraction (SAED) from as-deposited film shows amorphous Ti-Si. As-deposited Ti-Si film exhibited high stability even for the heat treatment at 773K for 3600s. N+ implantation induced the direct formation of nano crystalline of fcc-TiNx within the Ti-Si film. The XPS depth profiling and chemical shift suggest that the preferential nitriding of Ti accompanied with the segregation of SiNx occurred during N-implantation.
3641
作者: Per Andersson, Carlos H. Cáceres, Junichi Koike
123
作者: Yoshihito Kawamura, Kentaro Hayashi, Junichi Koike, Akira Kato, Ki Buem Kim, Tsuyoshi Masumoto
111
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