通过作者查论文: Takaya Fujita

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作者: Satoshi Tanimoto, Kenichi Ueoka, Takaya Fujita, Sawa Araki, Kazu Kojima, Toshiharu Makino, Satoshi Yamasaki
摘要: A new rectifier, called SPND or SNPD (Schottky-PN or -NP junction diode) and inherently showing low on-resistance and unipolar operation, was experimentally demonstrated for the first time on 4H-SiC. It is structured with an n or a p region of very low doping that is sandwiched and completely depleted between a Schottky junction and a one-sided PN junction. Either electrons or holes, but not both, contribute to the current conduction process. Clear and sharp rectifying properties are observed over the entire range of applied voltage.
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