通过关键词查论文: Time-Resolved Photoluminescence

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作者: Sergey A. Reshanov, Gerhard Pensl
摘要: Minority carrier (hole) lifetime investigations are conducted on identical 6H-SiC p+-n structures by electrical (reverse recovery, open circuit voltage decay) and optical (time-resolved photoluminescence) techniques. The p+-n diodes are fabricated by Al implantation. Depending on the particular analysis technique, the lifetime is determined either electrically in different regions of the p+-n diode or optically in the n-type 6H-SiC epilayer and results, therefore, in different values ranging from ≈10 ns to 2.5 µs.
417
作者: Takeshi Tawara, Hidekazu Tsuchida, Syunsuke Izumi, Isaho Kamata, Kunikaza Izumi
565
作者: Tetsuya Miyazawa, Masahiko Ito, Hidekazu Tsuchida
摘要: We investigate the carrier lifetimes in very thick 4H-SiC epilayers (~250 μm) by means of time-resolved photoluminescence and microwave photoconductive decay. Both the minority carrier lifetime and the high injection lifetime are found to reach 18.5 μs by applying the carbon implantation/annealing method to the as-grown epilayers. We also study the epilayer thickness dependence of the carrier lifetime by successive experiments involving lifetime measurement and polishing. Based on the relationships between epilayer thickness and carrier lifetime, the bulk carrier lifetime and the hole diffusion constant are discussed.
197
作者: J. Allègre, P. Lefebvre, Jean Camassel, B. Beaumont, Pierre Gibart
1279
作者: S. Haacke, I. Lawrence, H. Mariette, W.W. Rühle
121
作者: Tetsuya Miyazawa, Hidekazu Tsuchida
摘要: Thick and low-doped epilayers with a low Z1/2 center concentration were grown on 8o off-cut 4H-SiC(0001)Si-face substrate. Two post-growth processes, namely, the C+-implantation/annealing process or the thermal oxidation/Ar annealing process, were applied to the thick epilayers. The dependence of the Z1/2 center concentration and the carrier lifetime on process conditions was investigated. Under proper conditions, both processes could eliminate the Z1/2 center to a depth of 100 μm or more, and considerably improved the carrier lifetime while maintaining the surface roughness comparable to that of the as-grown sample. The effect of the post-growth processes applied on C-face is also presented.
81
作者: Ümit Özgür, Y. Fu, Cole W. Litton, Y.T. Moon, F. Yun, H.O. Everitt, Hadis Morkoç
摘要: Improved structural quality and radiative efficiency were observed in GaN thin films grown by metalorganic chemical vapor deposition on in situ-formed SiN and TiN porous network templates. The room temperature carrier decay time of 1.86 ns measured for a TiN network sample is slightly longer than that for a 200 μm-thick high quality freestanding GaN (1.73 ns). The linewidth of the asymmetric X-Ray diffraction (XRD) (1012) peak decreases considerably with the use of SiN and TiN layers, indicating the reduction in threading dislocation density. However, no direct correlation is yet found between the decay times and the XRD linewidths, suggesting that point defect and impurity related nonradiative centers are the main parameters affecting the lifetime.
1505
作者: Yi Wei, Ahmed Fadil, Hai Yan Ou
摘要: Silver (Ag) nanoparticles (NPs) were deposited on the surface of bulk Nitrogen-Boron co-doped 6H silicon carbide (SiC), and the Ag NPs were observed to induce localized surface plasmons (LSP) resonances on the SiC substrate, which was expected to improve the internal quantum efficiency (IQE) of the emissions of the donor-acceptor pairs of the SiC substrate. Room-temperature measurements of photoluminescence (PL), transmittance and time-resolved photoluminescence (TRPL) were applied to characterize the LSP resonances. Through the finite-difference time-domain (FDTD) simulation of the LSP resonance of an Ag nanoparticle on the SiC substrate, it is predicted that when the diameter of the cross section on the xy plane of the Ag nanoparticle is greater than 225 nm, the LSP starts to enhance the PL intensity. With implementation of a 3rd order exponential decay fitting model to the TRPL results, it is found that the average minority carrier lifetime of the SiC substrate decreased.
634
作者: Zhen Sheng Lee, Ling Min Kong, Zhe Chuan Feng, Gang Li, Hung Lin Tsai, Jer Ren Yang
摘要: Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) have been studied by temperature dependent photoluminescence (PL), photoluminescence excitation (PLE) and time-resolved photoluminescence (TRPL) spectroscopic techniques. Two typical samples are studied, both consisting of five periods of InGaN wells with different indium compositions of 21% and 24%, respectively. According to the PL and PLE measurement results, large values of activation energy and Stokes’ shift are obtained. This indicates that higher Indium composition results in an increase of composition fluctuation in the InGaN MQW region, showing the stronger carrier localization effect. The lifetime at the low-energy side of the InGaN peaks is longer for higher indium composition, as expected from the larger Stokes shift.
445
作者: Sergey A. Reshanov, Konrad Schneider, Reinhard Helbig, Gerhard Pensl, Hiroyuki Nagasawa, Adolf Schöner
513
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