通过关键词查论文: Donor

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作者: C. Wetzel, W. Walukiewicz, Eugene E. Haller, J.W. Ager, A. Chen, S. Fischer, P.Y. Yu, R. Jeanloz, I. Grzegory, Sylwester Porowski, T. Suski, Hiroshi Amano, Isamu Akasaki
31
作者: Teresa Monteiro, E. Pereira, F. Domingues-Adame, J. Piqueras
375
作者: J.H. Svensson, Erik Janzén, Olof Kordina, Bo Monemar
249
作者: Xin Wang, Yu Dong Lu, Zhi Qiang Zhuang
摘要: Sb-doped BaPbO3 ceramics were prepared by sol-gel method. The influence of Pb/Ba ratio and Sb concentration on the electrical properties of BaPb1+x-ySbyO3 (x=0.0, 0.1, 0.2 and 0≤y≤0.2) compositions were investigated. Holes and Pb vacancies were the major defects in lightly donor-doped BaPbO3, where the increase of donor concentration resulted in decrease of charge carriers (holes), leading to resistivity increasing. In the highly donor-doped conditions, the microstructure or solid solubility substituted defect structure as the main factor affecting the variety of resistivity. The lowest electrical resistivity of Sb-doped BaPbO3 was 2.69 × 10-4 /·cm when the Sb concentration y=0.12~0.13. Excess of Pb causes the born of barium vacancies. And, the observed PTCR behavior of BaPb1.2O3 involves the Barium vacancies in grain boundaries. 0.5 mol% Sb-doped BaPbO3 showed the best PTCR behavior and its Curie temperature was about 850°C.
653
作者: Dong Gyu Chang, Joon Hyung Lee, Jeong Joo Kim
摘要: SnO2 ceramics were co-doped with the aliovalent ions of CoO and Nb2O5 and the grain growth behavior of the SnO2 was investigated. When only CoO was doped, the grain growth exponent of SnO2 was 3. As the amount of Nb2O5 increased, the exponent changed from 3 to 2 when 0.505 mol% of Nb2O5 was added. The further addition of Nb2O5 changed the exponent from 2 to 3. When Nb2O5 content was 0.505 mol%, of which the grain growth exponent was 2, it is believed that an iso-electric point is formed without grain boundary segregation, since the respective space charges, generated by Nb5+ and Co3+ might compensate each other.
529
作者: Yurii M. Pokotilo, Alla N. Petukh, Valentin V. Litvinov, B.G. Tsvirko
摘要: The transformation of the shallow hydrogen-related donors, which have been formed in the silicon samples by irradiation of the low energy (300 keV) protons and following heat treatment under 350 0С or 450 0С was investigated. The experiment was carried out on Ag-Mo-Si Shottky diodes and diodes with shallow p+-n-junction. The concentration and distribution of these donors were defined by C-V-method at 1.2 MHz frequency. Using temperature dependence of equilibrium electron concentration it was established, that the hydrogen-related donors were charged controlled centers with negative electronic correlation energy (U<0). The transformation between both equilibrium configurations of the double hydrogen-related donor takes place when value of the Fermi level is arranged near Ec-0.30 eV. It was revealed that the donor transformation from neutral into double charged state have been stimulated by minority carriers trapping under room temperature when Fermi level was higher then level of the double electron occupation E(0/++)= Ec-0.30 eV.
229
作者: Krista Chindanon, Huang De Lin, Galyna Melnychuk, Yaroslav Koshka
摘要: In this work, nitrogen doping was investigated during the low-temperature halo-carbon epitaxial growth of 4H-SiC on Si- and C-faces. The dependencies of nitrogen incorporation on nitrogen flow rate, Si/C ratio, growth rate, and temperature were investigated. It was established that the efficiency of nitrogen incorporation for the C-face growth at 1300 °C is higher than that for the Si-face for a wide range of the growth conditions. Seeming deviation of the Si/C ratio dependence from the “site-competition” trend confirmed the critical role of the silicon vapor condensation during the low-temperature epitaxy. Opposite trends for the nitrogen doping dependence on the growth rate were observed on the Si- and C-faces. Finally, a complex temperature dependence of the nitrogen doping in the temperature range from 1300 to 1450 0C was observed.
159
作者: Tsubasa Nakagawa, Isao Sakaguchi, Kenji Matsumoto, Masashi Uematsu, Hajime Haneda, Naoki Ohashi
摘要: Diffusion behaviors of aluminum (Al) in zinc-oxide (ZnO) single crystals were measured by means of ion implantation technique and SIMS depth profiling. It was found that Al concentration profile had a peculiar shape with a constant-concentration region and a steep tail, which was also found in profiles of other donors such as Ga and In. Detailed analysis of the profiles revealed that the diffusivity of Al was proportional to the square of Al concentration and its intrinsic diffusivity was much smaller than previously reported values. Oxygen diffusion experiments were also performed and the implantation of Al ions enhanced the oxygen diffusion coefficients by about 20 times. This result indicates that oxygen interstitial diffusion occurs in n-type ZnO.
197
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