通过关键词查论文: Electron Mobility

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作者: Amador Pérez-Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Yvon Cordier, J.C. Moreno, José Millan, Phillippe Godignon
摘要: Channel mobility properties of SiC and GaN based MOSFETs and AlGaN/GaN HEMTs are compared in this paper. For a similar active area, the specific on-resistance of the MOSFET is much larger than the on-resistance for the HEMT, which is depending on the electron mobility in their respective channels. Physically-based models are used to fit this experimental transistor mobility.
1207
作者: Bin Li, Hong Xia Liu, Jin Li
摘要: In order to describe electron transport properties in inversion layer of strained Si/Si1-xGex nMOSFETs, a new analytic electron mobility model is proposed. The model not only takes into account the effect of germanium(Ge) content on phonon scattering-limited mobility and surface roughness-limited mobility, and but also includes the degradation effect of strained Si film thickness and temperature on the device mobility. For various Ge content and a wide range of normal electric field, temperature and strained Si film thickness, the model provides good agreement with the experimental data in references. In addition, the model can be expressed using the analytical expression and can be easily included in the device simulator.
1168
作者: O.V. Naumova, B. Fomin, V.P. Popov, Victor Strelchuk, A. Nikolenko, A.N. Nazarov
摘要: Properties of Si/buried oxide (BOX) systems with bonded interface in silicon-on-insulator (SOI) wafers were studied in this paper. Results show impact of the starting Si material - Czochralski (Cz) or float-zone (Fz) grown silicon on the electron mobility (μe) and BOX charge behavior in ultrathin SOI layers. In particular, there were found: 1) the μe ~ Ne-0.3 dependencies at the electron density Ne in the range of 4х (1011-1012) cm-2 in accumulation Cz-SOI layers with the μe degradation when Si thickness decreases from 20 to 9 nm, and 2) the ~ Ne-0.6 behavior of mobility with no degradation in Fz-SOI layers. Raman spectroscopy shows the structural modification of Cz-SOI layers. An origin of degradation of the electrical and structural properties for ultrathin SOI layer is discussed.
3
作者: G. Juška, K. Arlauskas, K. Genevičius, J. Kočka
327
作者: T. Balster, V.M. Polyakov, F.S. Tautz, H. Ibach, J.A. Schaefer
347
作者: Ankur Pandya, Satyam Shinde, Prafulla K. Jha
摘要: The electron mobility is calculated for h-BN nanosheets (h-BNNSs) and graphene with and without doping of manganese at high electric fields via acoustical deformation potential (ADP) scattering mechanism and piezoelectric scattering (Polar Acoustical Phonon (PAP) mechanism at low temperatures. Calculation includes the variation of electron Fermi energy and effective mass with high electric fields and with variation of Mn concentrations. Comparison of mobility in both the cases of with and without doping is carried out. It is observed that the net electron mobility due to both ADP and PAP mechanisms in graphene is much larger than that for h-BNNS for both the cases of with and without doping of manganese at low temperatures.
34
作者: Fa Jun Li, Li Ying Tan, Yan Ping Zhou
摘要: InGaAs is direct and narrow bandgap material with ultrahigh electron mobility, and is a promising candidate for optoelectronic device in the near-infrared region. The main objective of this manuscript is to design an InGaAs semiconductor-based photodetectors nanowire infrared photodetector, which would be manipulated in optical response wavelength range at room temperature with high-detective and fast-responsive performances. Considering into account mature technology in laser device and for maximizing 1.55 um optical communication performance, the design of achieved bandwidth is >1 Gbps. According to the theoretical calculations, the fundamental parameters of the InGaAs core-shell nanowire APD photodetector device are obtained, with certain values of single nanowire diameter, lateral size and applied voltage, r=100 nm, l=1 μm, Vbias=10 V. Meanwhile, we deal with the electrons mobility of the internal nanowire based on three factors, size effect, temperature and electric field effect. The results demonstrate that the InGaAs nanowire APD is potential candidatefor high rate in satellite laser communication field.
5163
作者: Cheng Wang, He Ming Zhang, Rong Xi Xuan, Hui Yong Hu
摘要: Si-based strained technology is currently an important topic of concern in the microelectronics field. The stress-induced enhancement of electron mobility contributes to the improved performance of Si-based strained devices. In this paper, Based on both the electron effective mass and the scattering rate models for strained-Si1-xGex/Si (101), an analytical electron mobility model for biaxial compressive strained-Si1-xGex /Si (101) is presented. The results show that the stress doesn’t make the electron mobility increased, but the electron mobility for [100] and [001] orientations decrease with increasing Ge fraction x, especially for [010] orientation expresses a sharp decrease. This physical phenomenon can be explained as: Although the applied stress (the higher the Ge fraction, the greater the applied stress) can enhance the electron mobility, alloy disorder scattering rate markedly increase. Overall the electron mobility decreases instead. The above result suggests that not all the mobilities for Si-based strained materials enhance with the stress applied. For the biaxial strained-SiGe material represented by Ge fraction, the effect of alloy disorder scattering on the enhancement of mobility must be concerned. The result can provide theoretical basis for the understanding of the improved physical characterizations and the enhanced mobility for Si-based strained materials.
364
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