通过关键词查论文: Proton Irradiation

文章题目页数

作者: Matthieu Florentin, Mihaela Alexandru, Aurore Constant, Bernd Schmidt, Philippe Godignon
摘要: This work presents the 10 MeV protons irradiation effects on 4H-SiC MOSFETs at different fluences. MOSFETs main electrical parameters, such as the channel mobility (µEFF), threshold voltage (VTH), transconductance (gm) and subthreshold current, were analyzed using the time bias stress instability (BSI) technique. Applying this method allowed us to study the effect of carriers interaction with generated interface traps, whether in the bulk or at the interface. Improvements, such as VTH stabilization in time and a significant increase of the µEFF at high fluencies, have been noticed. We assume that this behavior is connected with the atomic diffusion from the SiO2/SiC interface, towards the epilayer during proton irradiation. These atoms, in majority Nitrogen, may create other bonds by occupying various vacancies coming from Silicon and Carbon’s dangling bond. Therefore, by enhancing the passivated Carbon atoms number, we show that high irradiation proton could be a way to improve the SiO2/SiC interface quality.
121
作者: Xiang Ti Meng, Qiang Huang, Xing Yu Wang, Yong Nan Zheng, Ping Fan, Sheng Yun Zhu
摘要: The 9 and 16 MeV proton irradiations of CMOS Image Sensor in the fluence range from 5x108 to 4x1010 cm-2 and 5x109 to 1x1013 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 16 MeV protons are about 4x1010 and 5x1012cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.
7
作者: Alexander A. Lebedev, Klavdia S. Davydovskaya, Anatoly M. Strel'chuk, Andrey N. Yakimenko, Vitalii V. Kozlovski
摘要: The change in the current-voltage characteristics and in Nd-Na values in the base of 4H-SiC Schottky diodes and JBS diodes under irradiation with 0.9 MeV electrons and 15 MeV protons has been studied. The carrier removal rate for the diodes irradiated with electrons was 0.07-0.15 cm-1, and that in the case of protons, 50-70 cm-1. It was shown that the devices under study retain rectifying current-voltage characteristics up to electron doses of ~1017 cm-2. It was found that the radiation resistance of the SiC-based devices significantly exceeds that of silicon p-i-n-diodes with similar breakdown voltages. The simultaneous effect of high temperature and proton irradiation on the characteristics of 4H-SiC pn structures was examined.
217
作者: Giovanni Alfieri, Andrei Mihaila, Hussein M. Ayedh, Bengt Gunnar Svensson, Pavel Hazdra, Phillippe Godignon, José Millan, S. Kicin
摘要: In this contribution, we report on the electrical characterization of point defects in 4H-SiC p+in diodes. Ten electrically active levels have been detected in the base region of the devices, by employing Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Of these ten levels, six are majority carrier traps, in the 0.1-1.7 eV energy range below the conduction band edge, and four were minority carrier traps located in the 0.13-0.4 eV energy range above the valence band edge. We found that, during DLTS measurements, both majority and minority carrier traps can be detected and we explain this by considering the behavior of the quasi-Fermi levels. At last, we studied the impact of proton irradiation on the minority charge carrier lifetime.
308
作者: Alexander A. Lebedev, Boris Ya. Ber, Gagik A. Oganesyan, Sergey V. Belov, Natalia. V. Seredova, Irina P. Nikitina, Sergey P. Lebedev, Lev V. Shakhov, Vitalii V. Kozlovski
摘要: Effects of proton irradiation in n-3C-SiC grown by sublimation on a 4H-SiC substrate have been studied by the Hall effect and photoluminescence methods. It was found that the carrier removal rate (Vd) reaches a value of ~110 cm-1. The full compensation of samples with an initial concentration of (1-2) x 1018 cm -3 was estimated to occur at doses of about 6 x 1015 cm -2. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called "defective" photoluminescence was observed in 3C-SiC.
311
作者: Rupert C. Stevens, Konstantin Vassilevski, John E. Lees, Nicolas G. Wright, Alton B. Horsfall
摘要: Detectors capable of withstanding high radiation environments for prolonged periods of exposure are essential for the monitoring of nuclear power stations and nuclear waste as well as for space exploration. Schottky diode X-ray detectors were exposed to high dose proton irradiation (1013 cm-2, 50 MeV) and changes in the detection resolution (spectroscopic full width half-maximum) have been observed. Using Deep Level Transient Spectroscopy (DLTS) and the degradation of the electrical characteristics of the diode, we have shown that radiation induced traps located in the upper half of the bandgap have reduced the concentration of carriers.
547
作者: Vadim V. Emtsev, Nikolay V. Abrosimov, Vitalii V. Kozlovski, Gagik A. Oganesyan
摘要: Electrical properties of radiation-produced defects in p-Ge irradiated with MeV electrons and protons are investigated. The dominant defects in electron-irradiated p-Ge were found to be neutral for the most part, whereas they are electrically active in proton-irradiated materials. Evidently, the reactions between impurity atoms and intrinsic point defects leading to formation of secondary Ga-related defects in electron-and proton-irradiated p-Ge appear to be distinct. Production rates of radiation defects in n-Ge and p-Ge are compared. A marked difference in the removal rates of shallow donor/acceptor impurity states, at least by an order-of-magnitude, is thought to be due to greatly enhanced annihilation of Frenkel pairs in p-type Ge.
316
作者: Anatoly M. Strel'chuk, Vitalii V. Kozlovski, Alexander A. Lebedev, N.Yu. Smirnova
摘要: Excess currents of the different nature in 6H-SiC pn structures of the different origin and parameters were investigated. The effect of the suppression of the forward and reverse excess currents were observed after 0.9 MeV electron (dose 5x1016 ÷ 1.6x1017 cm-2) and 8 MeV proton (dose 5x1015 cm-2) irradiation for structures with shunts which is probably due to the presence of relatively small inhomogeneities. The shunts in another group of pn structures probably are more high capability and they are more stable against degradation during irradiation.
1001
作者: H. Tanimoto, H. Mizubayashi, M. Nagasawa, S. Okuda, Y. Tagishi
145
显示30个文章标题中的1到10个